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GaN Quick-charger Now Available for Prototype

GaN Quick-charger Now Available for Prototype

2020. 10. 14

Hawyang proudly presents our latest "60W PD GAN POWER" solution, meeting the size requirement of 55CC without any use of heatsink while maintaining our embedded GaN FET component temperature at 75°C / 167°F (115Vac/60W out /ambient temperature at 28°C). High-volt efficiency could be maintained at 93% efficiency while EMI (CE/RE) meets the requirement under -6dB threshold.

For more detailed information and specifications, visit our page on GaN Charger Modules, or contact us as below:
Taipei, Taiwansalesdep@hawyang-semi.com+886-(2)-8911-2699
Shenzhen, Chinasalesdep@hawyang-semi.com+86-755-8980-7897

HAWYANG SEMICONDUCTOR CORP.